The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK2937
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1051-0500 (Previous: ADE-208-560C) Rev.5.00 Sep 07, 2005
Features
• Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D G
1. Gate 2. Drain 3. Source
1
2 3
S
www.DataSheet4U.com
Rev.4.00 Sep 07, 2005 page 1 of 7
2SK2937
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
K2937 Datasheet
