HAT2173N mosfet equivalent, silicon n-channel mosfet.
* Capable of 8 V gate drive
* Low drive current
* High density mounting
* Low on-resistance
RDS(on) = 12.3 mΩ typ. (at VGS = 10 V)
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RENESAS Packag.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
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