H5N2004DL switching equivalent, silicon n channel mos fet high speed power switching.
www.DataSheet4U.com
* Low
* Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V)
* High speed switching: tf = 10 ns t.
Image gallery
TAGS
Download (Size : 126.44KB)