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FS20VSJ-3 - Pch Power MOSFET

Features

  • Drive voltage : 4 V.
  • VDSS :.
  • 150 V www. DataSheet4U. com.
  • rDS(ON) (max) : 0.29 Ω.
  • ID :.
  • 20 A.
  • Recovery Time of the Integrated Fast Recovery Diode (TYP. ) : 100 ns Outline TO-220S 3 4 1 1 2 3 1. 2. 3. 4. Gate Drain Source Drain 2, 4.

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FX20VSJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G0273-0100 Rev.1.00 Aug.20.2004 Features • Drive voltage : 4 V • VDSS : – 150 V www.DataSheet4U.com • rDS(ON) (max) : 0.29 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Outline TO-220S 3 4 1 1 2 3 1. 2. 3. 4. Gate Drain Source Drain 2, 4 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings –150 ±20 –20 –80 –20 –20 –80 70 – 55 to +150 – 55 to +150 1.
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