* Capable of 2.5 V gate drive
* Low drive current
* Low on-resistance RDS(on) = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C) REJ03G1909-0300 Rev.3.00 May .

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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