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2SK2329(L), 2SK2329(S)
Silicon N Channel MOS FET
REJ03G1008-0200 (Previous: ADE-208-1356) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S))
4 G 1 2 3 D 1. Gate 2. Drain 3. Source 4. Drain
1
2 3
S
Rev.2.