logo

2SK3000 Renesas (https://www.renesas.com/) Technology Silicon N Channel MOS FET

Description 2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G0379-0300Z (Previous ADE-208-585A (Z)) Rev.3.00 Jun.15.2004 Features www.DataSheet4U.com R • Low on-resistance DS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA) • 4 V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability Outline MPAK D 3 3 2 G 1 1 1. Source 2. Gate 3. Drain 2 S Note...
Features www.DataSheet4U.com R
• Low on-resistance DS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA)
• 4 V gate drive devices.
• Small package (MPAK)
• Expansive drain to source surge power capability Outline MPAK D 3 3 2 G 1 1 1. Source 2. Gate 3. Drain 2 S Note: Marking is “ZY
  –”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gat...

Datasheet PDF File 2SK3000 Datasheet - 153.18KB

2SK3000  






logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map