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2SK2596 - Silicon N-Channel MOSFET

Features

  • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. (f = 836.5 MHz).
  • Compact package capable of surface mounting REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Outline.

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Datasheet Details

Part number 2SK2596
Manufacturer Renesas
File Size 230.27 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK2596 Datasheet

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Full PDF Text Transcription

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2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 3 1 1 2 3 4 2, 4 Note: Marking is “BX”. 1. Gate 2. Source 3. Drain 4. Source *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) Note1 Pch Note2 Tch Tstg Ratings 17 ±10 0.
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