UPD5742T6J datasheet, amplifier equivalent, Renesas

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 115.22KB)

Features and benefits

* Low Noise : NV = −98 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −99 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ
* High Gain : GV = +9.0 dB TYP..

Application

* Microphone, Sensor, etc. ORDERING INFORMATION Part Number Order Number Package μPD5742T6J-E4 μPD5742T6J-E4-A.

Description

The μPD5742T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is 3-pin thin-type lead-less .

Image gallery