* VDSS = −30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 7.0 mΩ MAX. (VGS = −10 V, ID = −14 A)
* 4.5 V Gate-drive available
* Small and surface mo.

of portable equipment. Features
* VDSS = −30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 7.0 mΩ MAX. (V.

The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features
* VDSS = −30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 7.0 mΩ MAX. (VGS = −10 V,.

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