* Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = −10 V, ID = −22 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = −4.5 V, ID = −22 A)
* Low Ciss: Ciss = 3620 pF TYP.
*.

of notebook computers and Li-ion battery protection circuit. FEATURES
* Low on-state resistance RDS(on)1 = 3.3 mΩ MA.

The μ PA2731UT1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES
* Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = −10 V, ID = −22 A) .

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