UPA2719AGR fet equivalent, p-channel power mos fet.
* Low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = −10 V, ID = −5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS = −4.5 V, ID = −5.0 A)
* Low input capacitance Ciss = 2010.
of notebook computers and Lithium-Ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source 4 : .
The μ PA2719AGR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Lithium-Ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain
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