Datasheet4U Logo Datasheet4U.com

UPA2461T1Q - MOS FIELD EFFECT TRANSISTOR

Description

The μ PA2461T1Q is a switching device, which can be driven directly by a 2.5 V power source.

Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

📥 Download Datasheet

Datasheet preview – UPA2461T1Q

Datasheet Details

Part number UPA2461T1Q
Manufacturer Renesas
File Size 224.37 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet UPA2461T1Q Datasheet
Additional preview pages of the UPA2461T1Q datasheet.

📁 Similar Datasheet

  • UPA2450 - N-Channel MOSFET (NEC)
  • UPA2450B - N-Channel MOSFET (NEC)
  • UPA2450C - N-Channel MOSFET (NEC)
  • UPA2451 - N-Channel MOSFET (NEC)
  • UPA2451B - N-Channel MOSFET (NEC)
  • UPA2451C - N-Channel MOSFET (NEC)
  • UPA2452 - N-Channel MOSFET (NEC)
  • UPA2001C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
  • UPA2002C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
  • UPA2003C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
μ PA2461T1Q MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0186EJ0100 Rev.1.00 Dec 06, 2010 Description The μ PA2461T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2461T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features • 2.5 V drive available • Low on-state resistance ⎯ RDS(on)1 = 21.5 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) ⎯ RDS(on)2 = 22.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) ⎯ RDS(on)3 = 25.0 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A) ⎯ RDS(on)4 = 32.0 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) • Built-in G-S protection diode against ESD Ordering Information Part No.
Published: |