* Low on-resistance RDS(on) = 120 mΩ typ.(at VGS = 4.5 V, ID = 1.6 A)
* Low drive current
* High speed switching
* VDSS : 60 V and capable of 2.5 V gate d.

such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .

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