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RJP65S08DWA Datasheet, Renesas

RJP65S08DWA igbt equivalent, igbt.

RJP65S08DWA Avg. rating / M : 1.0 rating-12

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RJP65S08DWA Datasheet

Features and benefits


* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)
* High speed Switching
* Short circuit withstands t.

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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TAGS

RJP65S08DWA
IGBT
Renesas

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