• Part: RJP4009ANS
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 148.25 KB
Download RJP4009ANS Datasheet PDF
Renesas
RJP4009ANS
RJP4009ANS is N-Channel Power MOSFET manufactured by Renesas.
Preliminary Datasheet Nch IGBT for Strobe Flash Features - - - - - - Small surface mount package (VSON-8) VCES: 400 V ICM: 150 A @Tc = 70°C, CM = 400 μF Drive voltage: 2.5 V to 6 V (MAX) Pb-free Halogen-free R07DS0370EJ0200 Rev.2.00 Apr 27, 2011 Outline RENESAS Package code: PVSN0008JA-A (Package name: VSON-8<TNP-8DBV>) 5 8 4 1 1 2 3 4 8 7 6 5 1, 2, 3 : Emitter 4 : Gate 5, 6, 7, 8 : Collector Applications Strobe flash for cameras .Data Sheet.co.kr Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Collector current (Pulse) Power dissipation Junction temperature Storage temperature Symbol VCES VGES ICM Pj Tj Tstg Ratings 400 ±6 150 1.8 - 40 to +150 - 40 to +150 Unit V V A W °C °C Conditions VGE = 0 V VCE = 0 V CM = 400 μF (see performance curve) R07DS0370EJ0200 Rev.2.00 Apr 27, 2011 Page 1 of 4 Datasheet pdf - http://..net/ Preliminary Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Symbol ICES IGES VGE(th) VCE(sat) Cies Min. - - 0.4 - - Typ. - - 0.6 4.0 5500 Max. 1 ±10 1.2 9.0 - Unit μA μA V V p F Test conditions VCE = 400 V, VGE = 0 V VGE = ±6 V, VCS = 0 V VCE = 10 V, IC = 1 m A IC = 150 A, VGE = 2.5 V VCE = 25 V, VGE = 0 V, f = 1 MHz Performance...