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RJP1CS03DWA Datasheet, Renesas

RJP1CS03DWA igbt equivalent, igbt.

RJP1CS03DWA Avg. rating / M : 1.0 rating-11

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RJP1CS03DWA Datasheet

Features and benefits


* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)
* High speed switching
* Short circuit withstands ti.

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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TAGS

RJP1CS03DWA
IGBT
RJP1CS03DWT
RJP1CS04DWA
RJP1CS04DWT
Renesas

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