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RJK60S5DPQ-E0 Datasheet, Renesas

RJK60S5DPQ-E0 mosfet equivalent, high speed power switching mosfet.

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RJK60S5DPQ-E0 Datasheet

Features and benefits


* Superjunction MOSFET
* Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
* High speed switching tf = 23 ns typ. (at ID = 10 A, .

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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TAGS

RJK60S5DPQ-E0
High
Speed
Power
Switching
MOSFET
Renesas

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