RJK6035DPP-E0 mosfet equivalent, n-channel power mosfet.
* Low on-resistance RDS(on) = 1.1 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)
* Low leakage current
* High speed switching R07DS0616EJ0100 Rev.1.00 Feb 24, 20.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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