* Capable of 2.5 V gate drive
* Low on-resistance RDS(on) = 1.2 Ω typ. (at ID = 0.5 A, VGS = 2.5 V, Ta = 25°C)
* Low drive current REJ03G1889-0100 Rev.1.00 Ja.

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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