RJF0610JSP Datasheet | Renesas

Target Specifications Datasheet Silicon N Channel MOS FET Series Power Switching R07DS0568EJ0200 Rev.2.00 Apr 16, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features - Logic level operation (5 to 6 V Gate drive). - Built-in the over temperature shut-down circuit. - High endurance capability against to the short circuit. - Temperature hysteresis type. - High density mounting - Power...