RJF0610JSP Datasheet | Renesas

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features - Logic level operation (5 to 6 V Gate drive). - Built-in the over temperature shut-down circuit. - High endurance capability against to the short circuit. - Temperature hysteresis type. - High density mounting - Power supply voltage applies 12 V and 24 V. - AEC-Q101 pliant Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 1, 3 2, 4 5, 6, 7, 8 2 G Source Gate Drain Gate Resistor Current Limitation Circuit Temperature Self Gate Sensing Return Shut-down Circuit Circuit Circuit MOS1 DD 78 4 Current Gate Resistor Limitation Circuit Temperature Self Gate Sensing Return Shut-down Circuit Circuit Circuit 1 S MOS2 DD 56 3...