RJF0409JSP Datasheet | Renesas

Preliminary Datasheet 40V, 5A Silicon N Channel Thermal FET Power Switching R07DS1228EJ0300 Rev.3.00 Jul 28, 2015 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features - Logic level operation (4 V Gate drive). - Built-in the over temperature shut-down circuit. - High endurance capability against to the short circuit. - Latch type shut down operation (need 0 voltage recovery). - Built-in the current limitation circuit. - High density mounting - Power supply voltage applies 12 V. - AEC-Q101 pliant Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 (FP-8DAV)) 8 7 65 1 234 2 Current Gate Resistor Limitation Circuit Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit 78 4 Gate Resistor Temperature Sensing...