RBN150N180S2HFWA
RBN150N180S2HFWA is IGBT manufactured by Renesas.
Features
- Renesas generation 8th Trench IGBT
- Short circuit withstands time (10 s min.)
- Optimized for high power application
- Unsawn wafer Wafer size = 200 mm
- Quality grade: Standard
Outline
R07DS1454EJ0100 Rev.1.00
Apr 11th, 2023 wafer
1.Gate 2.Collector(The back) 3.Emitter
Absolute Maximum Ratings
(Tj = 25°C unless otherwise noted)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
VCES
Gate to emitter voltage
VGES
±30
Collector current
Tc = 25°C
300 Notes1
Tc = 100°C
150 Notes1
Junction temperature
Tj
175 Notes2
C
Notes: 1. Depends on thermal properties of assembly.
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175C.
3. Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Remendation for
Handling and Usage of Semiconductor Devices) and individual reliability...
