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RBN150N180S2HFWA - IGBT

General Description

and application examples.

Key Features

  • Renesas generation 8th Trench IGBT.
  • Short circuit withstands time (10 s min. ).
  • Optimized for high power.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RBN150N180S2HFWA 1800V - 300A/150A - IGBT Features  Renesas generation 8th Trench IGBT  Short circuit withstands time (10 s min.)  Optimized for high power application  Unsawn wafer Wafer size = 200 mm  Quality grade: Standard Outline Datasheet R07DS1454EJ0100 Rev.1.00 Apr 11th, 2023 wafer 1.Gate 2.Collector(The back) 3.Emitter Absolute Maximum Ratings (Tj = 25°C unless otherwise noted) Item Symbol Ratings Unit Collector to emitter voltage VCES 1800 V Gate to emitter voltage VGES ±30 V Collector current Tc = 25°C IC 300 Notes1 A Tc = 100°C IC 150 Notes1 A Junction temperature Tj 175 Notes2 C Notes: 1. Depends on thermal properties of assembly. 2. Please use this device in the thermal conditions which the junction temperature does not exceed 175C. 3.