RBN150N180S2HFWA - IGBT

Renesas

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Datasheet Details

Part number: RBN150N180S2HFWA
Manufacturer: Renesas ↗
File Size: 145.26 KB
Datasheet: RBN150N180S2HFWA-Renesas.pdf
Description: IGBT

RBN150N180S2HFWA Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your product or system.Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third parties arising from the use of these circuits, software, or information.2.

Features

Renesas generation 8th Trench IGBT.
Short circuit withstands time (10 s min. ).
Optimized for high power application.
Unsawn wafer Wafer size = 200 mm.
Quality grade: Standard Outline Datasheet R07DS1454EJ0100 Rev.1.00 Apr 11th, 2023 wafer 1.Gate 2.Collector(The back) 3.Emitter Absolute Maximum Ratings (Tj = 25°C unless otherwise noted) Item Symbol Ratings Unit Collector to emitter voltage VCES 1800 V Gate to emitter voltage VGES ±30 V Collector current.

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