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RAJ2930004AGM - Gate Driver

General Description

The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter applications.

Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side).

Key Features

  • On-chip Micro Isolator (isolated circuit).
  • High voltage isolation: 3750Vrms, 1min.
  • High CMTI (Common Mode Transient Immunity): over 150V/ns.
  • High output gate drive circuit.
  • Gate drive output peak current (Source / Sink): 10A typ. / 10A typ.
  • On-chip active miller clamp.
  • Soft turn-off function.
  • Various on-chip protection circuits.
  • Over current detection by DESAT (Desaturation Protection): 8.9V typ.
  • On-chip under volta.

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Full PDF Text Transcription (Reference)

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Preliminary Short Datasheet Rev0.2 RAJ2930004AGM Preliminary Short Datasheet Gate Driver IC for IGBTs and SiC MOSFETs 1. Description The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter applications. Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side). In addition, it boasts superior CMTI (Common Mode Transient Immunity) performance over 150 V/ns, providing reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in inverter systems.