RAA220001 Datasheet | Renesas

feature that is operational while VCC is below the POR threshold. The PHASE node is connected to the gate of the low-side MOSFET (LGATE) through a 30kΩ resistor, limiting the output voltage of the converter close to the gate threshold of the low-side MOSFET. This design is dependent on the current being shunted, which provides some protection to the load should the upper MOSFET(s) bee shorted. Applications - High light-load efficiency voltage regulators - Core regulators for advanced microprocessors - High current DC/DC converters Features - Dual MOSFET drives for synchronous rectified bridge - Advanced adaptive zero shoot-through protection ○ PHASE detection ○ LGATE detection ○ Auto-zero of r DS(ON) conduction offset effect - Low standby bias current - 36V internal bootstrap switcher - Bootstrap capacitor overcharging prevention - Integrated high-side gate-to-source resistor to prevent from self turn-on due to high input bus d V/dt - Pre-POR overvoltage protection for start-up and shutdown - Power rails undervoltage protection - Expandable bottom copper pad for enhanced heat sinking - Dual flat no-lead (DFN) package - Near chip-scale package footprint; improves PCB efficiency and thinner in profile - Pb-free (Ro HS pliant) Related Literature For a full list of related documents, visit our website: - RAA220001 device page Pin 6 +5V 40k 22.4k POR/ Control Logic Shoot Through Protection R16DS0005EU0100 Rev.1.00 Jul.11.19 Figure 1. Block Diagram BOOT UGATE 10k PHASE 30k Pin 7 Pins 6 and 7 must be tied together LGATE Page 1 of 15 1. Overview 1.1 Typical...