R1RP0408DGE-2PI Datasheet | Renesas

Description The R1RP0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RP0408DI is packaged in 400-mil 36-pin SOJ for high density surface mounting. Features - Single 5.0V supply: 5.0V ± 10% - Access time: 12ns (max) - pletely static memory ⎯ No clock or timing strobe required - Equal access and cycle times - Directly TTL patible ⎯ All inputs and outputs - Operating current: 130m A (max) - TTL standby current: 40m A (max) - CMOS standby current : 5m A (max) - Center VCC and VSS type pin out - Temperature range: - 40 to +85°C Ordering Information Type No. R1RP0408DGE-2PI Access time 12ns Package 400-mil 36-pin plastic SOJ R10DS0289EJ0100 Rev.1.00 Nov.18.19 Page 1 of 10 R1RP0408DI Series Pin Arrangement Pin Description A0 to A18 I/O1 to I/O8 CS# OE# WE# VCC VSS NC Pin name Address input Data input/output Chip select Output enable Write enable Power supply Ground No connection Function R10DS0289EJ0100 Rev.1.00 Nov.18.19 Page 2 of 10 R1RP0408DI Series Block Diagram R10DS0289EJ0100 Rev.1.00 Nov.18.19 Page 3 of 10 R1RP0408DI Series Operation Table CS# H L L L L Note: H: OE#  H L H...