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R1RP0408DGE-2PI - 4M High Speed SRAM

Download the R1RP0408DGE-2PI datasheet PDF (R1RP0408DI included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 4m high speed sram.

Description

The R1RP0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Features

  • Single 5.0V supply: 5.0V ± 10%.
  • Access time: 12ns (max).
  • Completely static memory ⎯ No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible ⎯ All inputs and outputs.
  • Operating current: 130mA (max).
  • TTL standby current: 40mA (max).
  • CMOS standby current : 5mA (max).
  • Center VCC and VSS type pin out.
  • Temperature range:.
  • 40 to +85°C Ordering Information Type No. R1RP040.

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Note: The manufacturer provides a single datasheet file (R1RP0408DI-Renesas.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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R1RP0408DI Series Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit) Datasheet R10DS0289EJ0100 Rev.1.00 Nov.18.19 Description The R1RP0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RP0408DI is packaged in 400-mil 36-pin SOJ for high density surface mounting. Features • Single 5.0V supply: 5.
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