R1QEA3618CBG, R1QBA3636CBG - 36-Mbit DDRII+ SRAM

Renesas

R1QEA3618CBG Datasheet Preview — This datasheet PDF includes multiple part numbers: R1QEA3618CBG, R1QBA3636CBG. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	R1QEA3618CBG, R1QBA3636CBG
Manufacturer	Renesas ↗
File Size	303.83 KB
Description	36-Mbit DDRII+ SRAM
Datasheet	R1QBA3636CBG-Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: R1QEA3618CBG, R1QBA3636CBG. Please refer to the document for exact specifications by model.

R1QEA3618CBG Product details

Description

The R1Q#A3636 is a 1,048,576-word by 36-bit and the R1Q#A3618 is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Features

႑ Power Supply.
1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) ႑ Clock.
Fast clock cycle time for high bandwidth.
Two input clocks (K and /K) for precise DDR timing at clock rising edges only.
Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems.
Clock-stop capability with Ps restart ႑ I/O.
Common data input/output bus.
Pipelined double data rate operation.
HSTL I/O.
User programmable o.

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Published: May 8, 2020 |