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R1QEA3618CBG Datasheet

Manufacturer: Renesas

This datasheet includes multiple variants, all published together in a single manufacturer document.

R1QEA3618CBG datasheet preview

Datasheet Details

Part number R1QEA3618CBG
Datasheet R1QEA3618CBG R1QBA3636CBG Datasheet (PDF)
File Size 303.83 KB
Manufacturer Renesas
Description 36-Mbit DDRII+ SRAM
R1QEA3618CBG page 2 R1QEA3618CBG page 3

R1QEA3618CBG Overview

It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration.

R1QEA3618CBG Key Features

  • 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
  • Fast clock cycle time for high bandwidth
  • Two input clocks (K and /K) for precise DDR timing at clock rising edges only
  • Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems
  • Clock-stop capability with Ps restart
  • mon data input/output bus
  • Pipelined double data rate operation
  • HSTL I/O
  • User programmable output impedance
  • DLL/PLL circuitry for wide output data valid window and future frequency scaling

R1QEA3618CBG Applications

  • 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
  • Fast clock cycle time for high bandwidth
  • Two input clocks (K and /K) for precise DDR timing at clock rising edges only
  • Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems
  • Clock-stop capability with Ps restart
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