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PS2565L1-1 - MULTI PHOTOCOUPLER

Download the PS2565L1-1 datasheet PDF. This datasheet also covers the PS2565-1 variant, as both devices belong to the same multi photocoupler family and are provided as variant models within a single manufacturer datasheet.

General Description

The PS2565-1 is optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor.

The PS2565-1 is in a plastic DIP (Dual In-line Package) and the PS2565L-1 is lead bending type (Gull-wing) for surface mount.

Key Features

  • AC input response.
  • High Isolation voltage (BV = 5 000 Vr. m. s. ).
  • High collector to emitter voltage (VCEO = 80 V).
  • High current transfer ratio (CTR = 200% TYP. ).
  • High-speed switching (tr = 3 μs TYP. , tf = 5 μs TYP. ).
  • Ordering number of taping product: PS2565L-1-F3 : 2 000 pcs/reel : PS2565L2-1-E3: 1 000 pcs/reel.
  • Safety standards.
  • UL approved: No. E72422.
  • CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PS2565-1-Renesas.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for PS2565L1-1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PS2565L1-1. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET PHOTOCOUPLER PS2565-1,PS2565L-1,PS2565L1-1,PS2565L2-1 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS...

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PONSE TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2565-1 is optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor. The PS2565-1 is in a plastic DIP (Dual In-line Package) and the PS2565L-1 is lead bending type (Gull-wing) for surface mount. The PS2565L1-1 is lead bending type for long creepage distance. The PS2565L2-1 is lead bending type for long creepage distance (Gull-wing) for surface mount. FEATURES • AC input response • High Isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High current transfer ratio (CTR = 20

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