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PS2561L1-1 - GaAs light emitting diode and an NPN silicon phototransistor

Download the PS2561L1-1 datasheet PDF. This datasheet also covers the PS2561-1 variant, as both devices belong to the same gaas light emitting diode and an npn silicon phototransistor family and are provided as variant models within a single manufacturer datasheet.

Description

The PS2561-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2561-1 is in a plastic DIP (Dual In-line Package) and the PS2561L-1 is lead bending type (Gull-wing) for surface mount.

The PS2561L1-1 is wide lead bending type.

Features

  • High isolation voltage (BV = 5 000 Vr. m. s. ).
  • High collector to emitter voltage (VCEO = 80 V).
  • High current transfer ratio (CTR = 200% TYP. ).
  • High-speed switching (tr = 3 s TYP. , tf = 5 s TYP. ).
  • Ordering number of taping product: PS2561L-1-F3 : 2 000 pcs/reel : PS2561L2-1-F3 : 2 000 pcs/reel.
  • Pb-Free product.
  • Safety standards.
  • UL approved: UL1577, Double protection.
  • CSA approved: CAN/CSA-C22.2 No. 62368-1, Reinforced insulation.
  • BSI approved: B.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PS2561-1-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PS2561L1-1
Manufacturer Renesas
File Size 5.11 MB
Description GaAs light emitting diode and an NPN silicon phototransistor
Datasheet download datasheet PS2561L1-1 Datasheet

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Other Datasheets by Renesas

Part Number Description
PS2561L-1 GaAs light emitting diode and an NPN silicon phototransistor
PS2561L2-1 GaAs light emitting diode and an NPN silicon phototransistor
PS2561-1 GaAs light emitting diode and an NPN silicon phototransistor
PS2561D-1 DIP PHOTOCOUPLER
PS2561DL-1 DIP PHOTOCOUPLER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PS2561-1, PS2561L-1, PS2561L1-1, PS2561L2-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE Data Sheet R08DS0207EJ0100 Rev.1.00 Dec 25, 2020 DESCRIPTION The PS2561-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2561-1 is in a plastic DIP (Dual In-line Package) and the PS2561L-1 is lead bending type (Gull-wing) for surface mount. The PS2561L1-1 is wide lead bending type. The PS2561L2-1 is wide lead bending type for surface mount. FEATURES  High isolation voltage (BV = 5 000 Vr.m.s.)  High collector to emitter voltage (VCEO = 80 V)  High current transfer ratio (CTR = 200% TYP.)  High-speed switching (tr = 3 s TYP., tf = 5 s TYP.
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