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PS2501L-1 Datasheet, Renesas

PS2501L-1 phototransistor equivalent, npn silicon phototransistor.

PS2501L-1 Avg. rating / M : 1.0 rating-11

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PS2501L-1 Datasheet

Features and benefits


* High isolation voltage (BV = 5 000 Vr.m.s.)
* High collector to emitter voltage (VCEO = 80 V)
* High-speed switching (tr = 3 s TYP. , tf = 5 s TYP.)
*.

Application


* Power supply
* Telephone/FAX.
* FA/OA equipment
* Programmable logic controller PIN CONNECTION (Top V.

Description

The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2501-1, -4 are in a plastic DIP (Dual In-line Package) and the PS2501L-1, -4 are lead bending type (Gu.

Image gallery

PS2501L-1 Page 1 PS2501L-1 Page 2 PS2501L-1 Page 3

TAGS

PS2501L-1
NPN
silicon
phototransistor
PS2501L-2
PS2501L-4
PS2501L
Renesas

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