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NX5313EH Datasheet, Renesas

NX5313EH diode equivalent, laser diode.

NX5313EH Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 132.79KB)

NX5313EH Datasheet
NX5313EH
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 132.79KB)

NX5313EH Datasheet

Features and benefits


* Optical output power Po = 13.0 mW
* Low threshold current lth = 6 mA
* Differential Efficiency ηd = 0.5 W/A
* Wide operating temperature range TC.

Application

of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of ea.

Description

The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. APPLICATION
* FTTH PON (B-PON, G-PON, GE-PON 10 km) syste.

Image gallery

NX5313EH Page 1 NX5313EH Page 2 NX5313EH Page 3

TAGS

NX5313EH
LASER
DIODE
Renesas

Manufacturer


Renesas (https://www.renesas.com/)

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