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NP89N055PUK Datasheet, Renesas

NP89N055PUK transistor equivalent, mos field effect transistor.

NP89N055PUK Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 105.99KB)

NP89N055PUK Datasheet
NP89N055PUK Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 105.99KB)

NP89N055PUK Datasheet

Features and benefits


* Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A)
* Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)
* Designed for automotive applicati.

Application

Features
* Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A)
* Low Ciss: Ciss = 4000 .

Description

The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A)
* Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)

Image gallery

NP89N055PUK Page 1 NP89N055PUK Page 2 NP89N055PUK Page 3

TAGS

NP89N055PUK
MOS
FIELD
EFFECT
TRANSISTOR
Renesas

Manufacturer


Renesas (https://www.renesas.com/)

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