NP84N06DLD fet equivalent, n-channel power mos fet.
* Channel temperature 175 degree rated
* Super low on-state resistance
RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 5 V, ID = 35 A.
FEATURES
* Channel temperature 175 degree rated
* Super low on-state resistance
RDS(on)1 = 6.5 mΩ MAX. (VGS = 1.
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
* Channel temperature 175 degree rated
* Super low on-state resistance
RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = .
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