* Channel Temperature 175 degree rated
* Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40.

FEATURES
* Channel Temperature 175 degree rated
* Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS =.

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
* Channel Temperature 175 degree rated
* Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 .

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