NP80N055MDG datasheet, fet equivalent, Renesas

Features and benefits

* Logic level
* Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID =.

Application

ORDERING INFORMATION PART NUMBER NP80N055MDG-S18-AY Note NP80N055NDG-S18-AY Note NP80N055PDG-E1B-AY Note NP80N055PDG-.

Description

The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N055MDG-S18-AY Note NP80N055NDG-S18-AY Note NP80N055PDG-E1B-AY Note NP80.

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