NP60N06VDK datasheet, mosfet equivalent, Renesas

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Features and benefits

* Super low on-state resistance  RDS(on)1 = 7.9 m MAX. (VGS = 10 V, ID = 30 A)
* Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V)
* Designed for automotive applic.

Application

Features
* Super low on-state resistance  RDS(on)1 = 7.9 m MAX. (VGS = 10 V, ID = 30 A)
* Low Ciss: Ciss = 24.

Description

NP60N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Super low on-state resistance  RDS(on)1 = 7.9 m MAX. (VGS = 10 V, ID = 30 A)
* Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V)
*.

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