NP48N055NLE transistor equivalent, mos field effect transistor.
* Channel temperature 175 degree rated
* Super low on-state resistance
RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 21 mΩ MAX. (VGS = 5 V, ID = 24 A) .
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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