NP48N055MLE, NP48N055ELE - MOS FIELD EFFECT TRANSISTOR

Renesas

Datasheet Details

Part number: NP48N055MLE, NP48N055ELE
Manufacturer: Renesas ↗
File Size: 232.75 KB
Datasheet: NP48N055ELE-Renesas.pdf
Description: MOS FIELD EFFECT TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: NP48N055MLE, NP48N055ELE.
Please refer to the document for exact specifications by model.

These products are N-channel MOS Field Effect Transistors designed for high current switching applications..

Channel temperature 175 degree rated.
Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 21 mΩ MAX. (VGS = 5 V, ID = 24 A) RDS(on)3 = 24 mΩ MAX. (VGS = 4.5 V, ID = 24 A).
Low input capacitance Ciss = 1970 pF TYP.
Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all product.

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