• Part: NP48N055ELE
  • Description: MOS FIELD EFFECT TRANSISTOR
  • Category: Transistor
  • Manufacturer: Renesas
  • Size: 232.75 KB
NP48N055ELE Datasheet (PDF) Download
Renesas
NP48N055ELE

Key Features

  • Channel temperature 175 degree rated
  • Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 21 mΩ MAX. (VGS = 5 V, ID = 24 A) RDS(on)3 = 24 mΩ MAX. (VGS = 4.5 V, ID = 24 A)
  • Low input capacitance Ciss = 1970 pF TYP.
  • Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14095EJ5V0DS00 (5th edition) Date Published October 2007 NS