* Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)
* Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)
* Designed for automotive applicati.

Features
* Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)
* Low Ciss: Ciss = 1690 .

These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features
* Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)
* Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)

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