NP29N06QDK mosfet equivalent, dual n-channel power mosfet.
* Super low on-state resistance RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7.5 A)
* Low Ciss: Ciss = 1000 pF TYP. .
Features
* Super low on-state resistance RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 30 m MAX. (V.
NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
* Super low on-state resistance RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7.5 A.
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