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NP29N06QDK Datasheet, Renesas

NP29N06QDK mosfet equivalent, dual n-channel power mosfet.

NP29N06QDK Avg. rating / M : 1.0 rating-11

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NP29N06QDK Datasheet

Features and benefits


* Super low on-state resistance  RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A)  RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7.5 A)
* Low Ciss: Ciss = 1000 pF TYP. .

Application

Features
* Super low on-state resistance  RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A)  RDS(on)2 = 30 m MAX. (V.

Description

NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Super low on-state resistance  RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A)  RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7.5 A.

Image gallery

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TAGS

NP29N06QDK
Dual
N-channel
Power
MOSFET
Renesas

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