NE5531079A fet equivalent, 7.5v operation silicon rf power ldmos fet.
* High output power
: Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
* High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 .
* 460 MHz band radio systems
* 900 MHz band radio systems
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The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This d.
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