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NE5531079A Datasheet, Renesas

NE5531079A fet equivalent, 7.5v operation silicon rf power ldmos fet.

NE5531079A Avg. rating / M : 1.0 rating-12

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NE5531079A Datasheet

Features and benefits


* High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
* High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 .

Application


* 460 MHz band radio systems
* 900 MHz band radio systems ORDERING INFORMATION Part Number Order Number Pack.

Description

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This d.

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TAGS

NE5531079A
7.5V
OPERATION
SILICON
POWER
LDMOS
FET
NE5532
NE5532A
NE5533
Renesas

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