NE5531079A - 7.5V OPERATION SILICON RF POWER LDMOS FET

Renesas

The NE5531079A by Renesas is a 7.5V OPERATION SILICON RF POWER LDMOS FET. Below is the official datasheet preview.

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NE5531079A 7.5V OPERATION SILICON RF POWER LDMOS FET by Renesas - Datasheet Preview — Official preview page of the **NE5531079A** 7.5V OPERATION SILICON RF POWER LDMOS FET datasheet (Renesas).

Datasheet Details

Part number	NE5531079A
Manufacturer	Renesas
File Size	154.22 KB
Description	7.5V OPERATION SILICON RF POWER LDMOS FET
Datasheet	NE5531079A-Renesas.pdf
Additional preview pages of the NE5531079A datasheet.

NE5531079A Product details

Description

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems.

Features

High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
High linear gain : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm).
Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
Single supply : VDS = 7.5 V MAX.

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Published: Apr 1, 2016 |