NE5531079A
DESCRIPTION
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This device can deliver 40.0 d Bm output power with 68% power added efficiency at 460 MHz under the 7.5 V supply voltage.
FEATURES
- High output power
: Pout = 40.0 d Bm TYP. (VDS = 7.5 V, IDset = 200 m A, f = 460 MHz, Pin = 25 d Bm)
- High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 m A, f = 460 MHz, Pin = 25 d Bm)
- High linear gain
: GL = 20.5 d B TYP. (VDS = 7.5 V, IDset = 200 m A, f = 460 MHz, Pin = 10 d Bm)
- Surface mount package
: 5.7 × 5.7 × 1.1 mm MAX.
- Single supply
: VDS = 7.5 V MAX.
APPLICATIONS
- 460 MHz band radio systems
- 900 MHz band radio systems
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
NE5531079A-A
79A (Pb-Free) W5
- 12 mm wide...
