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NE3519M04 - N-channel GaAs HJ-FET

Key Features

  • R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Amplifier.
  • Low noise figure and high associated gain NF = 0.40 dB TYP. , Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz.
  • Flat-lead 4-pin thin-type super minimold (M04) package.

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Datasheet Details

Part number NE3519M04
Manufacturer Renesas
File Size 244.84 KB
Description N-channel GaAs HJ-FET
Datasheet download datasheet NE3519M04 Datasheet

Full PDF Text Transcription for NE3519M04 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE3519M04. For precise diagrams, and layout, please refer to the original PDF.

PreliminaryData Sheet NE3519M04 N-channel GaAs HJ-FET, L to C Band Low Noise FEATURES R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Amplifier • Low noise figure and high associat...

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0 Rev.1.00 Oct 21, 2010 Amplifier • Low noise figure and high associated gain NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • Satellite radio (SDARS, etc.

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