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NE3517S03 - K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET

General Description

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Key Features

  • Super low noise figure, high associated gain NF = 0.7 dB TYP. , Ga = 13.5 dB TYP. @ f = 20 GHz.
  • K-band Micro-X plastic (S03) package.

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Datasheet Details

Part number NE3517S03
Manufacturer Renesas
File Size 225.71 KB
Description K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
Datasheet download datasheet NE3517S03 Datasheet

Full PDF Text Transcription for NE3517S03 (Reference)

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas...

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cs Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Free Datasheet http://www.datasheet4u.com/ Notice 1. All information included in this document is current as of the date t

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