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NE3513M04 - N-Channel GaAs HJ-FET

General Description

Rev.

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1.

Key Features

  • R09DS0028EJ0100 Rev.1.00 Oct 18, 2011.
  • Low noise figure and high associated gain: NF = 0.45 dB TYP. , Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz NF = 0.5 dB TYP. , Ga = 12 dB TYP. @VDS = 2 V, ID = 6 mA, f = 12 GHz (Reference Value).
  • Flat-lead 4-pin thin-type super minimold (M04) package.

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Datasheet Details

Part number NE3513M04
Manufacturer Renesas
File Size 244.73 KB
Description N-Channel GaAs HJ-FET
Datasheet download datasheet NE3513M04 Datasheet

Full PDF Text Transcription for NE3513M04 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE3513M04. For precise diagrams, and layout, please refer to the original PDF.

Data Sheet NE3513M04 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain FEATURES R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 • Low noise figure and high associated gai...

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J0100 Rev.1.00 Oct 18, 2011 • Low noise figure and high associated gain: NF = 0.45 dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz NF = 0.5 dB TYP., Ga = 12 dB TYP.

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