NE202930 transistor equivalent, silicon npn epitaxial high frequency transistor.
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* High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification Suitable for equipments of low collector voltage (.
R09DS0003EJ0100 Rev.1.00 Jul 14, 2010
APPLICATIONS
* LNA (Low Noise Amplifier) or power splitter for digital-TV
O.
Summary
First edition issued
Rev. 1.00
Date Jul 14, 2010
Page −
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