N6006NZ datasheet, mosfet equivalent, Renesas

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Features and benefits

* Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A)
* Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V)
* High current ID(DC.

Application

Features
* Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A)
* Low input capacitance Ciss =.

Description

The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A)
* Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS.

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