N6006NZ mosfet equivalent, n-channel mosfet.
* Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A)
* Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V)
* High current ID(DC.
Features
* Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A)
* Low input capacitance Ciss =.
The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
* Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A)
* Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS.
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