N0412N datasheet, mosfet equivalent, Renesas

Features and benefits

* Low on-state resistance RDS (on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A)
* Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V)
* High current ID.

Application

Features
* Low on-state resistance RDS (on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A)
* Low input capacitance Ciss .

Description

The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Low on-state resistance RDS (on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A)
* Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, V.

Image gallery