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M1008204 - Serial MRAM Memory

This page provides the datasheet information for the M1008204, a member of the M1004204 Serial MRAM Memory family.

Datasheet Summary

Description

Mxxxx204 is a magneto-resistive random-access memory (MRAM).

It is offered in density ranging from 4Mbit to 16Mbit.

MRAM technology is analogous to Flash technology with SRAM compatible read/write timings (Persistent SRAM, P-SRAM).

Features

  • Interface.
  • Serial Peripheral Interface QSPI (4-4-4).
  • Single Data Rate Mode: 108MHz.
  • Double Data Rate Mode: 54MHz.
  • Technology.
  • 40nm pMTJ STT-MRAM.
  • Data Endurance: 1016 write cycles.
  • Data Retention: 20 years @ 85°C.
  • Density.
  • 4Mb, 8Mb, 16Mb.
  • Operating Voltage Range.
  • VCC: 1.71V.
  • 2.00V.
  • VCC: 2.70V.
  • 3.60V.
  • Operating Temperature Range.
  • Industrial: -40°C to 85°C.

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Datasheet preview – M1008204

Datasheet Details

Part number M1008204
Manufacturer Renesas
File Size 1.06 MB
Description Serial MRAM Memory
Datasheet download datasheet M1008204 Datasheet
Additional preview pages of the M1008204 datasheet.

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Full PDF Text Transcription

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High Performance M1004204/M1008204/M1016204 Serial MRAM Memory M3004204/M3008204/M3016204 Description Mxxxx204 is a magneto-resistive random-access memory (MRAM). It is offered in density ranging from 4Mbit to 16Mbit. MRAM technology is analogous to Flash technology with SRAM compatible read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile with 1016 write cycles endurance and greater than 20-year retention @85°C. MRAM is a true random-access memory; allowing both reads and writes to occur randomly in memory. MRAM is ideal for applications that must store and retrieve data without incurring large latency penalties. It offers low latency, low power, infinite endurance and scalable non-volatile memory technology.
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