* Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)
* Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V) Ordering Information Part N.

Features
* Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)
* Low input capacitance ⎯ .

R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)
* Low input ca.

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